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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 Operating Temperature n Lower Leakage Current : 10 A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.041 (Typ.)
IRFW/I540A
BVDSS = 100 V RDS(on) = 0.052 ID = 28 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25) Continuous Drain Current (TC=100) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25) * Total Power Dissipation (TC=25) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds

Value 100 28 19.8 110 20 523 28 10.7 6.5 3.8 107 0.71 - 55 to +175
Units V A A V mJ A mJ V/ns W W W/
300
Thermal Resistance
Symbol RJC RJA RJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.4 40 62.5 /W Units
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1
2001 Fairchild Semiconductor Corporation
1
IRFW/I540A
Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(iller? Charge Min. Typ. Max. Units 100 -2.0 -----------------0.11 ------22.56 325 148 18 18 90 56 60 10.8 27.9 --4.0 100 -100 10 100 0.052 -380 170 50 50 180 120 78 --nC ns A S pF V V/ V nA
N-CHANNEL POWER MOSFET
Electrical Characteristics (TC=25 unless otherwise specified)
Test Condition VGS=0V,ID=250A ID=250A VGS=20V VGS=-20V VDS=100V VDS=80V,TC=150 VGS=10V,ID=14A VDS=40V,ID=14A

See Fig 7
VDS=5V,ID=250A
1320 1710
VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=28A, RG=9.1 See Fig 13 VDS=80V,VGS=10V, ID=28A See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Min. Typ. Max. Units --------132 0.63 28 110 1.5 --A V ns C
Test Condition Integral reverse pn-diode in the MOSFET TJ=25,IS=28A,VGS=0V TJ=25,IF=28A diF/dt=100A/s
Notes ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=1mH, IAS=28A, VDD=25V, RG=27, Starting TJ =25 ISD28A, di/dt400A/s, VDDBVDSS , Starting TJ =25 Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature
2
N-CHANNEL POWER MOSFET
Fig 1. Output Characteristics
12 0
Top : VGS 15V 10 V 8.0 V 7.0 V 6.0 V 5.5V 5.0 V Bottom : 4.5V
IRFW/I540A
Fig 2. Transfer Characteristics
12 0
ID , Drain Current [A]
ID , Drain Current [A]
1 5 oC 7
11 0
11 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =4 V . DS 0 us et 3 2 0 s P l e T s .5 6 8 1 0
1 0
0
@Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 10 0 11 0
- 5 oC 5 10 0
1 -1 0
2
4
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
00 .8 12 0
Fig 4. Source-Drain Diode Forward Voltage
IDR , Reverse Drain Current [A]
RDS(on) , [ ] Drain-Source On-Resistance
00 .6
V =1 V 0 GS
00 .4
11 0
V =2 V 0 GS 00 .2 @Nt :T =2 C oe J 5 00 .0 0 3 0 6 0 9 0 10 2
o
1 5 oC 7 2 oC 5 10 0 04 . 06 . 08 . 10 . 12 . 14 .
@Nts: oe 1 V =0V . GS us et 2 2 0 s P l e T s .5 16 . 18 . 20 . 22 . 24 .
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
20 50 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd
Fig 6. Gate Charge vs. Gate-Source Voltage
V =2 V 0 DS V =5 V 0 DS V =8 V 0 DS
20 00
1 0
10 50 C oss 10 00 C rss 50 0 @Nts: oe 1 V =0V . GS 2 f=1Mz . H
VGS , Gate-Source Voltage [V]
C iss
Capacitance [pF]
5
@Nts:I =80A oe D 2. 0 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0
00 1 0
11 0
VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
3
IRFW/I540A
Fig 7. Breakdown Voltage vs. Temperature
12 . 30 .
N-CHANNEL POWER MOSFET
Fig 8. On-Resistance vs. Temperature
BVDSS , (Normalized) Drain-Source Breakdown Voltage
11 .
RDS(on) , (Normalized) Drain-Source On-Resistance
25 .
20 .
10 .
15 .
10 . @Nts: oe 1 V =1 V . GS 0 2 I =1. A . D 40 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 20 0
09 .
@Nts: oe 1 V =0V . GS 2 I = 2 0 A .D 5 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 20 0
05 .
08 . -5 7
00 . -5 7
TJ , Junction Temperature [oC]
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
13 0 Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y
Fig 10. Max. Drain Current vs. Case Temperature
3 0
ID , Drain Current [A]
2 5 1 s 0 1 0 s 0 1m s
12 0
ID , Drain Current [A]
2 0
11 0 D C
1m 0s
1 5
1 0
10 0
@Nts: oe 1 T = 2 oC .C 5 2 T = 1 5 oC .J 7 3 Snl Ple . ige us
5
1 -1 0 0 1 0
11 0
12 0
0 2 5
5 0
7 5
10 0
15 2
10 5
15 7
VDS , Drain-Source Voltage [V]
Tc , Case Temperature [oC]
Fig 11. Thermal Response
Thermal Response
100 D=0.5 @ Notes : 1. Z J C (t)=1.4 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)
PDM
0.2 0.1 10- 1 0.05 0.02 0.01
Z (t) ,
single pulse
t1 t2
JC
10- 2 - 5 10
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration
[sec]
4
N-CHANNEL POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
IRFW/I540A
* Current Regulator "
50K 12V 200nF 300nF
Same Type as DUT
VGS Qg
10V
VDS VGS DUT
3mA
Qgs
Qgd
R1
Current Sampling (IG) Resistor
R2
Current Sampling (ID) Resistor
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL Vout Vin RG DUT Vin 10V
td(on) t on tr td(off) t off tf 10%
Vout VDD
( 0.5 rated VDS )
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
LL VDS
Vary tp to obtain required peak ID
BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD BVDSS IAS C VDD VDD
tp
ID
RG DUT 10V
tp
ID (t) VDS (t) Time
5
IRFW/I540A
N-CHANNEL POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS --
IS L Driver RG VGS
Same Type as DUT
VGS
VDD
* dv/dt controlled by G * IS controlled by Duty Factor ?
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode Forward Voltage Drop
6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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